PART |
Description |
Maker |
HYS64D16020GD HYS64D16020GDL-7-A HYS64D16020GDL-8- |
DDR SDRAM Modules - 128MB (16Mx64) PC2100 2-bank Unbuffered DDR SDRAM SO Modules
|
Infineon Technologies AG
|
K4H280438F-TC/LA0 K4H280838F-TC/LA2 K4H280838F-TC/ |
128Mb F-die DDR SDRAM Specification 128Mb的的F - DDR SDRAM内存芯片规格 RESISTOR, 2M OHM, 0.063W, 1%
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYMD2166466 HYMD216646L6 HYMD2166466-H |
16Mx64|2.5V|K/H/L|x4|DDR SDRAM - Unbuffered DIMM 128MB 16M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
HYNIX SEMICONDUCTOR INC
|
EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM 300MHz 2.8V 4M x 32 DDR SDRAM 333MHz 2.8V 4M x 32 DDR SDRAM 350MHz 2.8V 4M x 32 DDR SDRAM 4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.] Etron Technology Inc. ETRON[Etron Technology Inc.]
|
HY5DU28422ET |
128Mb DDR SDRAM
|
Hynix Semiconductor
|
EBD13UB6ALS-75 EBD13UB6ALS-7A EBD13UB6ALS EBD13UB6 |
128MB DDR SDRAM S.O. DIMM
|
Elpida Memory
|
K4H281638L-LCB3 K4H281638L-LCCC K4H281638L-LCCD |
128Mb L-die DDR SDRAM Specification
|
Samsung semiconductor
|
NT5DS32M4AT |
(NT5DS16M8AT / NT5DS32M4AT) 128Mb DDR SDRAM
|
Nanya Techology
|
W3EG7218S265BD4 W3EG7218S202AD4 W3EG7218S202BD4 W3 |
128MB - 16Mx72 DDR SDRAM UNBUFFERED w/PLL
|
WEDC[White Electronic Designs Corporation]
|
HYMD116645BL8-K HYMD116645BL8-L HYMD116645BL8-M HY |
Unbuffered DDR SDRAM DIMM SDRAM|DDR|16MX64|CMOS|DIMM|184PIN|PLASTIC 内存|复员| 16MX64 |的CMOS |内存| 184PIN |塑料 16Mx64|2.5V|M/K/H/L|x8|DDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor http://
|
Z84C00 Z8400 Z0840008VEC Z0840006VEC |
NMOS/CMOS Z80 CPU CENTRAL PROCESSING UNIT MEMORY, SDRAM, DDR, 128MB, 8MX16, TSOP-66 Microprocessor
|
Zilog.
|